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SI4403BDY データシート(PDF) 1 Page - Vishay Siliconix |
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SI4403BDY データシート(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFETS Si4403BDY Vishay Siliconix New Product Document Number: 72268 S-31412—Rev. A, 07-Jul-03 www.vishay.com 1 P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 -20 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID - 9.9 - 7.3 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID - 7.9 - 5.8 A Pulsed Drain Current IDM -30 A continuous Source Current (Diode Conduction)a IS - 2.3 - 1.3 Maximum Power Dissipationa TA = 25_C PD 2.5 1.35 W Maximum Power Dissipationa TA = 70_C PD 1.6 0.87 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 43 50 Maximum Junction-to-Ambienta Steady State RthJA 71 92 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25 C/W Notes a Surface Mounted on 1” x 1” FR4 Board. |
同様の部品番号 - SI4403BDY |
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同様の説明 - SI4403BDY |
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