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TDA8922BJ データシート(PDF) 11 Page - NXP Semiconductors |
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TDA8922BJ データシート(HTML) 11 Page - NXP Semiconductors |
11 / 32 page 9397 750 13357 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 1 October 2004 11 of 32 Philips Semiconductors TDA8922B 2 × 50 W class-D power amplifier 9. Limiting values [1] Current limiting concept. See also Section 13.6. 10. Thermal characteristics [1] See also Section 13.5. 11. Static characteristics Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VP supply voltage - ±30 V IORM repetitive peak current in output pin maximum output current limiting [1] 5- A Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tj junction temperature - 150 °C Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient [1] TDA8922BTH in free air 35 K/W TDA8922BJ in free air 35 K/W Rth(j-c) thermal resistance from junction to case [1] TDA8922BTH 1.3 K/W TDA8922BJ 1.3 K/W Table 7: Static characteristics VP = ±26 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supply VP supply voltage [1] ±12.5 ±26 ±30 V Iq(tot) total quiescent supply current no load; no filter; no snubber network connected - 5065mA Istb standby supply current - 150 500 µA Mode select input; pin MODE VI input voltage [2] 0- 6 V II input current VI = 5.5 V - 100 300 µA Vstb input voltage for Standby mode [2] [3] 0 - 0.8 V Vmute input voltage for Mute mode [2] [3] 2.2 - 3.0 V Von input voltage for Operating mode [2] [3] 4.2 - 6 V |
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