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AON6596 データシート(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON6596 データシート(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.5 1.95 2.5 V 6.2 7.5 TJ=125°C 9.7 11.7 8.4 10.5 mΩ gFS 67 S VSD 0.72 1 V IS 35 A Ciss 1150 pF Coss 180 pF Crss 105 pF Rg 0.5 1.1 1.7 Ω Qg(10V) 20 30 nC Qg(4.5V) 9.5 15 nC Qgs 2.7 nC Qgd 5 nC Qgs 2.7 nC Qgd 5 nC tD(on) 6.5 ns tr 2 ns Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz VDS=VGS, ID=250µA Output Capacitance Forward Transconductance IS=1A,VGS=0V VDS=5V, ID=20A VGS=10V, ID=20A VDS=0V, VGS=±20V Maximum Body-Diode Continuous Current G Input Capacitance Gate-Body leakage current VGS=10V, VDS=15V, RL=0.75Ω, Diode Forward Voltage DYNAMIC PARAMETERS VGS=4.5V, ID=20A Turn-On Rise Time Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS Turn-On DelayTime Gate Source Charge VGS=4.5V, VDS=15V, ID=20A Gate Drain Charge mΩ VGS=10V, VDS=15V, ID=20A Total Gate Charge Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Gate resistance f=1MHz IDSS µA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=250µA, VGS=0V RDS(ON) Static Drain-Source On-Resistance tr 2 ns tD(off) 17 ns tf 3.5 ns trr 8.7 ns Qrr 13.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Turn-On Rise Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev.1.0: March 2014 www.aosmd.com Page 2 of 6 |
同様の部品番号 - AON6596 |
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同様の説明 - AON6596 |
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