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IRF6635 データシート(PDF) 1 Page - International Rectifier |
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IRF6635 データシート(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 06/02/05 IRF6635 DirectFET™ Power MOSFET Description The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth- ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv- ing previous best thermal resistance by 80%. The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc- tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Typical values (unless otherwise specified) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage RoHs compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.63mH, RG = 25Ω, IAS = 25A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Notes: SQ SX ST MQ MX MT DirectFET™ ISOMETRIC MX 0 102030405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 24V VDS= 15V ID= 25A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A Max. 25 180 250 ±20 30 32 200 25 VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.3m Ω@ 10V 1.8mΩ@ 4.5V 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 ID = 32A TJ = 25°C TJ = 125°C Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 47nC 17nC 4.7nC 48nC 29nC 1.8V PD - 96981B |
同様の部品番号 - IRF6635 |
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同様の説明 - IRF6635 |
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