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SI4900DY データシート(PDF) 2 Page - Vishay Siliconix |
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SI4900DY データシート(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si4900DY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 105 A VGS = 10 V, ID = 4.3 A 0.046 0.046 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 3.9 A 0.057 0.059 Ω Forward Transconductance a gfs VDS = 15 V, ID = 4.3 A 16 15 S Diode Forward Voltage a VSD IS = 1.7 A, VGS = 0 V 0.80 0.80 V Dynamic b Input Capacitance Ciss 732 665 Output Capacitance Coss 65 75 Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 28 40 pF VDS = 30 V, VGS = 10 V, ID = 4.3 A 11 13 Total Gate Charge Qg 5.6 6 Gate-Source Charge Qgs 2.3 2.3 Gate-Drain Charge Qgd VDS = 30 V, VGS = 4.5 V, ID = 4.3 A 2.6 2.6 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 73237 S-50392 Rev. A, 14-Mar-05 |
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同様の説明 - SI4900DY |
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