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STGD5NB120SZ-1 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STGD5NB120SZ-1
部品情報  N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD5NB120SZ-1 データシート(HTML) 3 Page - STMicroelectronics

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STGD5NB120SZ-1 - STGD5NB120SZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2.
(3) Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE = 25 V , IC = 5 A
5S
Cies(*)
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0V
430
pF
Coes(*)
Output Capacitance
40
pF
Cres(*)
Reverse Transfer
Capacitance
7pF
Rg
Gate Resistance
4
K
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Delay Time
Current Rise Time
Turn-on Current Slope
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive =1KΩ
Tj = 25°C
690
170
39.6
ns
ns
A/µs
td(on)
tr
(di/dt)on
Dealy Time
Current Rise Time
Turn-on Current Slope
ICC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive =1KΩ
Tj = 125°C
600
185
39
ns
ns
A/µs
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
tr(Voff)
td(off)
tf
Cross-over Time
Off Voltage Rise Time
Delay Time
Current Fall Time
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive =1KΩ
Tj = 25°C
4
2.2
12.1
1.13
µs
µs
µs
µs
tc
tr(Voff)
td(off)
tf
Cross-over Time
Off Voltage Rise Time
Delay Time
Current Fall Time
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive =1KΩ
Tj = 125°C
5
2.2
12.1
2
µs
µs
µs
µs
Symbol
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
2.59
9
11.59
mJ
mJ
mJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 18)
2.64
10.2
12.68
mJ
mJ
mJ


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