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MBRF10100CT データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF10100CT データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRF10100CT FEATURES · Schottky barrier chip · Low Power Loss,High Efficiency · Guard ring for transient protection · High Operating Junction Temperature · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current 10 A IFSM Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 120 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
同様の部品番号 - MBRF10100CT |
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同様の説明 - MBRF10100CT |
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