データシートサーチシステム |
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2SK973 データシート(PDF) 1 Page - Hitachi Semiconductor |
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2SK973 データシート(HTML) 1 Page - Hitachi Semiconductor |
1 / 7 page Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2A ——————————————————————————————————————————— Drain peak current ID(peak)*8 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 2A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK973 L , 2SK973 S Silicon N-Channel MOS FET 1 2 3 4 2, 4 1 3 DPAK-1 S type L type 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 |
同様の部品番号 - 2SK973 |
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同様の説明 - 2SK973 |
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