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NTE858M データシート(PDF) 1 Page - NTE Electronics |
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NTE858M データシート(HTML) 1 Page - NTE Electronics |
1 / 3 page NTE858M NTE858SM Integrated Circuit Dual, Low–Noise JFET–Input Operational Amplifier Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally com- pensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias cur- rents, input offset currents, and supply currents. Moreover, these devices exhibit low–noise and low harmonic distortion making them ideal for use in high–fidelity audio amplifier applications. Features: D Available in Two Different Package Types: 8–Lead Mini DIP (NTE858M) SOIC–8 Surface Mount (NTE858SM) D Low Input Noise Voltage: 18nV√Hz Typ D Low Harmonic Distortion: 0.01% Typ D Low Input Bias and Offset Currents D High Input Impedance: 1012Ω Typ D High Slew Rate: 13V/µs Typ D Wide Gain Bandwidth: 4MHz Typ D Low Supply Current: 1.4mA per Amp Absolute Maximum Ratings: Supply Voltage VCC +18V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VEE –18V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential Input Voltage, VID ±30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Voltage Range (Note 1), VIDR ±15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Short–Circuit Duration (Note 2), tS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation, PD 680mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above TA = +47°C 10mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Ambient Temperature Range, TA 0 ° to +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less. Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratungs are not exceeded. |
同様の部品番号 - NTE858M |
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同様の説明 - NTE858M |
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