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SI3433BDV データシート(PDF) 2 Page - Vishay Siliconix |
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SI3433BDV データシート(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si3433BDV SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 0.80 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −4.5 V 156 A VGS = −4.5 V, ID = −5.6 A 0.034 0.034 VGS = −2.5 V, ID = −4.8 A 0.043 0.045 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −1 A 0.055 0.060 Ω Forward Transconductance a gfs VDS = −5 V, ID = −5.6 A 15 10 S Diode Forward Voltage a VSD IS = −1.7 A, VGS = 0 V −0.80 −0.70 V Dynamic b Total Gate Charge Qg 11.6 12 Gate-Source Charge Qgs 1.7 1.7 Gate-Drain Charge Qgd VDS = −10 V, VGS = −4.5 V, ID = −5.6 A 3.5 3.5 nC Turn-On Delay Time td(on) 16 15 Rise Time tr 13 45 Turn-Off Delay Time td(off) 83 80 Fall Time tf VDD = − 10 V, RL = 10 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω 9 60 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72188 S-50383 Rev. B, 21-Mar-05 |
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