データシートサーチシステム |
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SM2L54 データシート(PDF) 1 Page - Toshiba Semiconductor |
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SM2L54 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM2G54,SM2L54 2004-07-15 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2G54,SM2L54 AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 800V R.M.S. On−State Current : IT (RMS) = 2A High Commutation (dv / dt) : (dv / dt) c = 5V / µs (Min.) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage VDRM 800 V R.M.S. On−State Current (Full Sine Waveform) IT (RMS) 2 A 8 (50Hz) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 8.8 (60Hz) A I 2 t Limit Value I 2 t 0.32 A 2 s Critical Rate of Rise of On−State Current (Note) di / dt 50 A / µs Peak Gate Power Dissipation PGM 3 W Average Gate Power Dissipation PG (AV) 0.3 W Peak Gate Voltage VFGM 10 V Peak Gate Current IGM 1.6 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Note: di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 Unit: mm JEDEC − JEITA − TOSHIBA − Weight: 0.82g 1 : T1 2 : T2 3 : GATE |
同様の部品番号 - SM2L54 |
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同様の説明 - SM2L54 |
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