IXGR60N60C2 datasheet(2/6 Pages) IXYS

部品番号	IXGR60N60C2

部品情報	Lightspeed 2TM Series (Electrically Isolated Back Surface)

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メーカー	IXYS [IXYS Corporation]

ホームページ	http://www.ixys.com

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IXYS reserves the right to change limits, test conditions, and dimensions.

R

thJ-DCB

(Note 2)

0.25

K/W

R

thJC

(Note 3)

0.50 K/W

R

thCS

0.15

K/W

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

I

C

= 50 A; V

CE = 10 V,

40

55

S

Note 1

C

ies

3900

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

60N60C2

280

pF

60N60C2D1

320

pF

C

res

97

pF

Q

g

140

nC

Q

ge

I

C = 50 A, VGE = 15 V, VCE = 0.5 VCES

28

nC

Q

gc

35

nC

t

d(on)

18

ns

t

ri

25

ns

t

d(off)

95 150

ns

t

fi

35

ns

E

off

0.49

0.8 mJ

t

d(on)

18

ns

t

ri

25

ns

E

on

1.6

mJ

t

d(off)

130

ns

t

fi

80

ns

E

off

0.92

mJ

Inductive load, T

J = 25°C

I

C = 50 A, VGE = 15 V

V

CE = 400 V, RG = Roff = 2.0 Ω

Inductive load, T

J = 125°C

I

C = 50 A, VGE = 15 V

V

CE = 400 V, RG = Roff = 2.0 Ω

Note 1: Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

2: R

thJ-DCB is the thermal resistance junction-to-internal side of DCB substrate

3: R

thJC is the thermal resistance junction-to-external side of DCB substrate

IXGR 60N60C2

IXGR 60N60C2D1

ISOPLUS 247 Outline

Reverse Diode (FRED)

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ. max.

V

F

I

F = 60 A, VGE = 0 V,

2.0

V

Note 1

T

J = 150°C

1.39

I

RM

I

F = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C

8.3

A

V

R = 100 V

t

rr

I

F = 1 A; -di/dt = 200 A/ms; VR = 30 V

35

ns

R

thJC

0.85 K/W

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

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