データシートサーチシステム |
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LM336Z25 データシート(PDF) 3 Page - Fairchild Semiconductor |
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LM336Z25 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page 3 www.fairchildsemi.com Absolute Maximum Ratings(Note 1) Note 1: The Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum rating. Electrical Characteristics (0qC < T A < +70qC, unless otherwise specified) Parameter Symbol Value Unit Reverse Current IR 15 mA Forward Current IF 10 mA Operating Temperature Range LM336Z25 TOPR 0 a +70 qC Storage Temperature Range TSTG 60 a +150 qC Parameter Symbol Conditions Min Typ Max Unit Reverse Breakdown Voltage VR TA = +25qC, 2.44 2.49 2.54 V IR = 1mA Reverse Breakdown Change with Current 'VR/'IR TA = +25qC- 2.6 10 mV 400 PA d IR d 10mA Reverse Dynamic Impedance ZD TA = +25qC- 0.2 1 : IR = 1mA Temperature Stability STT IR = 1mA - 1.8 6 mV Reverse Breakdown Change with Current 'VR/'IR 400 PA d IR d 10mA - 3 12 mV Reverse Dynamic Impedance ZD IR = 1mA - 0.4 1.4 : Long Term Stability In Reference Voltage ST IR = 1mA - 20 - ppm/Khr |
同様の部品番号 - LM336Z25 |
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同様の説明 - LM336Z25 |
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