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SI4300DY データシート(PDF) 1 Page - Vishay Siliconix |
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SI4300DY データシート(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized APPLICATIONS D Low Power Sychronous Rectification Si4300DY Vishay Siliconix Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.0185 @ VGS = 10 V 9 30 0.033 @ VGS = 4.5 V 7 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.5 V @ 1 A 2.0 S/A D/K S/A D/K S/A D/K G D/K SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET K G S Schottky Diode A D Ordering Information: Si4300DY Si4300DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage (MOSFET) VDS 30 Reverse Voltage (Schottky) VDA 30 V Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA = 25_C ID 9 6.4 Continuous Drain Current (TJ = 150 C) (MOSFET)a TA = 70_C ID 7 5.1 Pulsed Drain Current (MOSFET) IDM 40 A Continuous Source Current (MOSFET Diode Conduction)a IS 2.3 1.25 A Average Foward Current (Schottky) IF 2.3 1.25 Pulsed Foward Current (Schottky) IFM 20 Maximum Power Dissipation (MOSFET)a TA = 25_C 2.5 1.38 Maximum Power Dissipation (MOSFET)a TA = 70_C PD 1.6 0.88 W Maximum Power Dissipation (Schottky)a TA = 25_C PD 2.2 1.25 W Maximum Power Dissipation (Schottky)a TA = 70_C 1.4 0.80 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Schottky Parameter Symbol Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 40 50 45 55 Maximum Junction-to-Ambienta Steady-State RthJA 70 90 78 100 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 18 23 25 30 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
同様の部品番号 - SI4300DY |
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同様の説明 - SI4300DY |
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