データシートサーチシステム |
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BC856A データシート(PDF) 1 Page - Central Semiconductor Corp |
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BC856A データシート(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS (TA=25°C) SYMBOL BC858 BC857 BC856 UNITS Collector-Base Voltage VCBO 30 50 80 V Collector-Emitter Voltage VCEO 30 45 65 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB= 30V 15 nA ICBO VCB= 30V, TA=150°C 4.0 µA IEBO VEB=5.0V 100 nA BVCBO IC=10µA (BC858) 30 V BVCBO IC=10µA (BC857) 50 V BVCBO IC=10µA (BC856) 80 V BVCEO IC=10mA (BC858) 30 V BVCEO IC=10mA (BC857) 45 V BVCEO IC=10mA (BC856) 65 V BVEBO IE=10µA 5.0 V VCE(SAT) IC=10mA, IB=0.5mA 0.3 V VCE(SAT) IC=100mA, IB=5.0mA 0.65 V VBE(ON) IC=2.0mA, VCE=5.0V 0.6 0.75 V VBE(ON) IC=10mA, VCE=5.0V 0.82 V fT VCE=5.0V, IC=10mA, f=100MHz 100 MHz NF VCE=5.0V, IC=200µA, RS=2KΩ, f= 1KHz, BW=200Hz 10 dB BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C MIN MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=2.0mA 125 250 220 475 420 800 BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R1 (10-September 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: PLEASE SEE MARKING CODE TABLE ON FOLLOWING PAGE Note: Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code. |
同様の部品番号 - BC856A |
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同様の説明 - BC856A |
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