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SI6469DQ データシート(PDF) 4 Page - Vishay Siliconix |
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SI6469DQ データシート(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si6469DQ Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70858 S-60717—Rev. A, 01-Feb-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.6 –0.4 –0.2 –0.0 0.2 0.4 0.6 0.8 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 1..0 1.2 0 0.01 0.02 0.03 0.04 0.05 0.06 024 68 1 10 30 ID = 6.0 A 0.01 0 1 25 30 5 15 10 30 0.1 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Threshold Voltage TJ – Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 600 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 20 10 |
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