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2SD2161 データシート(PDF) 1 Page - NEC |
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2SD2161 データシート(HTML) 1 Page - NEC |
1 / 6 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D14864EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING DATA SHEET 2002 The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±5.0 A Collector current (pulse) IC(pulse) PW ≤ 300 µs, duty cycle ≤ 10% ±10 A Base current (DC) IB(DC) 0.5 A TC = 25 °C 20 W Total power dissipation PT TA = 25 °C 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ORDERING INFORMATION Ordering Name Package 2SD2161 Isolated TO-220 (Isolated TO-220) INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter |
同様の部品番号 - 2SD2161 |
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同様の説明 - 2SD2161 |
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