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2SK3322-S データシート(PDF) 1 Page - NEC |
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2SK3322-S データシート(HTML) 1 Page - NEC |
1 / 8 page The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. Not all products and/or types are availabe in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14114EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan 1999, 2000 The mark ★ shows major revised points. DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) • Avalanche capability ratings • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±5.5 A Drain Current (pulse) Note1 ID(pulse) ±20 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 65 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 4.0 A Single Avalanche Energy Note2 EAS 10.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3322 TO-220AB (MP-25) 2SK3322-S TO-262 2SK3322-ZJ TO-263(MP-25ZJ) 2SK3322-ZK TO-263(MP-25ZK) ★ ★ |
同様の部品番号 - 2SK3322-S |
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同様の説明 - 2SK3322-S |
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