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P2A06BT データシート(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD.

部品番号 P2A06BT
部品情報  N-Channel Logic Level Enhancement Mode Field Effect Transistor
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メーカー  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
ホームページ  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P2A06BT データシート(HTML) 4 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.1
4
H-48-3
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2A06BT
TO-220
Halogen-Free & Lead-Free
NIKO-SEM
0
600
1200
1800
2400
3000
0.001
0.01
0.1
1
10
100
Single Pulse
R
θJC = 0.65 ˚C/W
TC = 25
˚C
DC
100ms
10ms
1ms
1
10
100
1000
10000
1
10
100
NOTE :
1.VGS = 10V
2.TC =25
˚C
3.R
θJC = 65 ˚C/W
4.Single Pulse
Operation in This Area
is Limited by RDS(ON)
Single Pulse
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 0.65 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
On-Resistance VS Temperature
Source-Drain Diode Forward Voltage
VSD, Source-To-Drain Voltage(V)
TJ , Junction Temperature(
˚C)
Safe Operating Area
Single Pulse Maximum Power Dissipation
VDS, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
T1 , Square Wave Pulse Duration[sec]
0.4
0.9
1.4
1.9
2.4
-50
-25
0
25
50
75
100
125
150
VGS=10V
ID=20A
25℃
150℃
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2


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