Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP15R06KL4
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ.
max.
Durchlaßspannung
forward voltage
Tvj = 150°C,
I F = 15 A
VF
-1
-
V
Schleusenspannung
threshold voltage
Tvj = 150°C
V(TO)
-
0,71
-
V
Ersatzwiderstand
slope resistance
Tvj = 150°C
rT
-18
-
m
W
Sperrstrom
reverse current
Tvj = 150°C,
V R = 800 V
IR
-5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RAA'+CC'
-
11
-
m
W
Transistor Wechselrichter/ Transistor Inverter
min.
typ.
max.
Kollektor-Emitter Sättigungsspannung
VGE = 15V, Tvj = 25°C, IC =
15 A
VCE sat
-
1,95
2,55
V
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C, IC =
15 A
-
2,2
-
V
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C,
IC =
0,4mA
VGE(TO)
4,5
5,5
6,5
V
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Cies
-
0,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE =20V, Tvj =25°C
IGES
-
-
400
nA
Einschaltverzögerungszeit (ind. Last)
IC = INenn,
VCC =
300 V
turn on delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG =
68 Ohm
td,on
-37
-
ns
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
-
34
-
ns
Anstiegszeit (induktive Last)
IC = INenn,
VCC =
300 V
rise time (inductive load)
VGE = ±15V, Tvj = 25°C, RG =
68 Ohm
tr
-37
-
ns
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
-
37
-
ns
Abschaltverzögerungszeit (ind. Last)
IC = INenn,
VCC =
300 V
turn off delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG =
68 Ohm
td,off
-
216
-
ns
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
-
223
-
ns
Fallzeit (induktive Last)
IC = INenn,
VCC =
300 V
fall time (inductive load)
VGE = ±15V, Tvj = 25°C, RG =
68 Ohm
tf
-17
-
ns
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
-
26
-
ns
Einschaltverlustenergie pro Puls
IC = INenn,
VCC =
300 V
turn-on energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
Eon
-
0,6
-
mWs
L S =
80 nH
Abschaltverlustenergie pro Puls
IC = INenn,
VCC =
300 V
turn-off energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG =
68 Ohm
Eoff
-
0,4
-
mWs
L S =
80 nH
Kurzschlußverhalten
tP
£ 10µs, VGE £ 15V,
RG =
68 Ohm
SC Data
Tvj
£125°C,
VCC =
360 V
ISC
-60
-
A
dI/dt =
1000 A/µs
-mA
ICES
-
5,0
VGE = 0V, Tvj =125°C, VCE = 600V
2(12)