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IRHM7160 データシート(PDF) 3 Page - International Rectifier |
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IRHM7160 データシート(HTML) 3 Page - International Rectifier |
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3 / 8 page  www.irf.com 3 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation IRHM7160 IRHM7160 IRHM7160 IRHM7160 IRHM7160 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Parameter Parameter Parameter Parameter 100 KRads(Si) 300 - 1000K Rads (Si) U UU UUnits nits nits nits nits Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions Min Min Min Min Min Max Max Max Max Max Min Max Min Max Min Max Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 100 V VGS = 0V, ID = 1.0mA V/5 JD Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward 100 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current 25 25 µA VDS=80V, VGS =0V RDS(on) Static Drain-to-Source" ➃ 0.045 0.062 Ω VGS = 12V, ID =35A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source" ➃ 0.045 0.062 Ω VGS = 12V, ID =35A On-State Resistance (TO-254AA) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Radiation Characteristics Radiation Characteristics Radiation Characteristics Radiation Characteristics 1. Part numbers IRHM7160 (JANSR2N7432) 2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432) Fig a. Fig a. Fig a. Fig a. Fig a. Single Event Effect, Safe Operating Area VSD Diode Forward Voltage" ➃ 1.8 1.8 V VGS = 0V, IS = 35A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Ion Ion Ion Ion Ion LET LET LET LET LET Energy Range Energy Range Energy Range Energy Range Energy Range V VV V VDS(V) DS(V) DS(V) DS(V) DS(V) MeV/(mg/cm )) (MeV) µm) @ @ @ @ @ V VV VVGS GS GS GS GS =0V @ =0V @ =0V @ =0V @ =0V @ V VV V VGS GS GS GS GS =-5V@ =-5V@ =-5V@ =-5V@ =-5V@ V VV V VGS GS GS GS GS =-10V@ =-10V@ =-10V@ =-10V@ =-10V@ V VV VVGS GS GS GS GS =-15V@ =-15V@ =-15V@ =-15V@ =-15V@ V VV VVGS GS GS GS GS =-20V =-20V =-20V =-20V =-20V Cu 28 285 43 100 100 100 80 60 Br 36.8 305 39 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 VGS Cu Br |
同様の部品番号 - IRHM7160 |
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同様の説明 - IRHM7160 |
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