BUK7520-55A datasheet(5/15 Pages) PHILIPS

部品番号	BUK7520-55A

部品情報	N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.

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5 / 15 page

Philips Semiconductors

BUK7520-55A; BUK7620-55A

TrenchMOS™ standard level FET

Product speciﬁcation

Rev. 01 — 18 January 2001

5 of 15

9397 750 07751

8.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C55

−−

V

Tj = −55 °C50

−−

V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C2

3

4

V

Tj = 175 °C1

−−

V

Tj = −55 °C

−−

4.4

V

IDSS

drain-source leakage current

VDS = 55 V; VGS =0V

Tj =25 °C

−

0.05

10

µA

Tj = 175 °C

−−

500

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0V

−

2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A;

Figure 7 and 8

Tj =25 °C

−

17

20

m

Ω

Tj = 175 °C

−−

40

m

Ω

Dynamic characteristics

Ciss

input capacitance

VGS =0V; VDS =25V;

f = 1 MHz; Figure 12

−

1200

1592

pF

Coss

output capacitance

−

290

356

pF

Crss

reverse transfer capacitance

−

179

240

pF

td(on)

turn-on delay time

VDD = 30 V; RL = 1.2 Ω;

VGS =10V; RG =10 Ω;

−

15

−

ns

tr

rise time

−

74

−

ns

td(off)

turn-off delay time

−

70

−

ns

tf

fall time

−

40

−

ns

Ld

internal drain inductance

from drain lead 6mm from

package to centre of die

−

4.5

−

nH

from contact screw on

mounting base to centre of

die SOT78

−

3.5

−

nH

from upper edge of drain

mounting base to centre of

die SOT404

−

2.5

−

nH

Ls

internal source inductance

from source lead to source

bond pad

−

7.5

−

nH

同様の部品番号 - BUK7520-55A

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