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1N5386BTA データシート(PDF) 4 Page - ON Semiconductor

部品番号 1N5386BTA
部品情報  5 Watt Surmetic 40 Zener Voltage Refulators
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

1N5386BTA データシート(HTML) 4 Page - ON Semiconductor

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1N5333B Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Voltage (Note 7)
Zener Impedance (Note 7)
Leakage
Current
IR
DVZ
IZM
Device
Device
VZ (Volts)
@ IZT
ZZT @ IZT
ZZK @ IZK
IZK
IR @ VR
IR
(Note 8)
DVZ
(Note 9)
IZM
(Note 10)
Device
(Note 6)
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA Max Volts
A
Volts
mA
1N5363B
1N5363B
28.5
30
31.5
40
8
140
1
0.5
22.8
3.7
0.6
158
1N5364B
1N5364B
31.35
33
34.65
40
10
150
1
0.5
25.1
3.5
0.6
144
1N5365B
1N5365B
34.2
36
37.8
30
11
160
1
0.5
27.4
3.5
0.65
132
1N5366B
1N5366B
37.05
39
40.95
30
14
170
1
0.5
29.7
3.1
0.65
122
1N5367B
1N5367B
40.85
43
45.15
30
20
190
1
0.5
32.7
2.8
0.7
110
1N5368B
1N5368B
44.65
47
49.35
25
25
210
1
0.5
35.8
2.7
0.8
100
1N5369B
1N5369B
48.45
51
53.55
25
27
230
1
0.5
38.8
2.5
0.9
93
1N5370B
1N5370B
53.2
56
58.8
20
35
280
1
0.5
42.6
2.3
1.0
86
1N5371B
1N5371B
57
60
63
20
40
350
1
0.5
45.5
2.2
1.2
79
1N5372B
1N5372B
58.9
62
65.1
20
42
400
1
0.5
47.1
2.1
1.35
76
1N5373B
1N5373B
64.6
68
71.4
20
44
500
1
0.5
51.7
2.0
1.52
70
1N5374B
1N5374B
71.25
75
78.75
20
45
620
1
0.5
56
1.9
1.6
63
1N5375B
1N5375B
77.9
82
86.1
15
65
720
1
0.5
62.2
1.8
1.8
58
1N5376B
1N5376B
82.65
87
91.35
15
75
760
1
0.5
66
1.7
2.0
54.5
1N5377B
1N5377B
86.45
91
95.55
15
75
760
1
0.5
69.2
1.6
2.2
52.5
1N5378B
1N5378B
95
100
105
12
90
800
1
0.5
76
1.5
2.5
47.5
1N5379B
1N5379B
104.5
110
115.5
12
125
1000
1
0.5
83.6
1.4
2.5
43
1N5380B
1N5380B
114
120
126
10
170
1150
1
0.5
91.2
1.3
2.5
39.5
1N5381B
1N5381B
123.5
130
136.5
10
190
1250
1
0.5
98.8
1.2
2.5
36.6
1N5382B
1N5382B
133
140
147
8
230
1500
1
0.5
106
1.2
2.5
34
1N5383B
1N5383B
142.5
150
157.5
8
330
1500
1
0.5
114
1.1
3.0
31.6
1N5384B
1N5384B
152
160
168
8
350
1650
1
0.5
122
1.1
3.0
29.4
1N5385B
1N5385B
161.5
170
178.5
8
380
1750
1
0.5
129
1.0
3.0
28
1N5386B
1N5386B
171
180
189
5
430
1750
1
0.5
137
1.0
4.0
26.4
1N5387B
1N5387B
180.5
190
199.5
5
450
1850
1
0.5
144
0.9
5.0
25
1N5388B
1N5388B
190
200
210
5
480
1850
1
0.5
152
0.9
5.0
23.6
Devices listed in
bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of
±5%.
7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2
″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
8. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (TA = 25°C +8°C, −2°C).
9. VOLTAGE REGULATION (
DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 7 (TA = 25°C +8°C, −2°C).
10. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.


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