SI6562DQ datasheet(5/6 Pages) VISHAY

部品番号	SI6562DQ

部品情報	N- and P-Channel 2.5-V (G-S) MOSFET

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Si6562DQ

Vishay Siliconix

Document Number: 70720

S-56944—Rev. B, 23-Nov-98

www.vishay.com

S FaxBack 408-970-5600

2-5

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P-CHANNEL

0

6

12

18

24

30

02468

10

0

0.9

1.8

2.7

3.6

4.5

0369

12

15

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

–50

–25

0

25

50

75

100

125

150

0

0.04

0.08

0.12

0.16

0.20

0

6

12

18

24

30

0

500

1000

1500

2000

2500

0

4

8

12

16

20

0

4

8

12

16

20

0

0.5

1.0

1.5

2.0

2.5

3.0

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS – Drain-to-Source Voltage (V)

VGS = 5, 4.5, 4, 3,5 V

VGS – Gate-to-Source Voltage (V)

25

_C

TC = 125_C

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 3.5 A

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

VGS = 4.5 V

ID = 3.5 A

TJ – Junction Temperature (_C)

VGS = 4.5 V

VGS = 2.5 V

2.5 V

2 V

–55

_C

1.5 V

3 V

同様の部品番号 - SI6562DQ

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI6562DQ	125Kb / 7P	N- and P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI6562DQ	125Kb / 7P	N- and P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022

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同様の説明 - SI6562DQ

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