BC489B datasheet(2/6 Pages) ONSEMI

部品番号	BC489B

部品情報	High Current Transistors(NPN Silicon)

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BC489,A,B

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS* (Continued)

Collector – Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

—

0.2

0.3

0.5

—

Vdc

Base – Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)(1)

VBE(sat)

—

0.85

0.9

1.2

—

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)

fT

—

200

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

7.0

—

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

50

—

pF

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle 2.0%.

Figure 1. Switching Time Test Circuits

* Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

5.0

µs

+10 V

0

Vin

5.0

µF

100

TURN–ON TIME

–1.0 V

VCC

+40 V

RL

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

5.0

µs

Vin

5.0

µF

100

TURN–OFF TIME

+VBB

VCC

+40 V

RL

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

RB

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