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BC850CLT1G データシート(PDF) 1 Page - ON Semiconductor |
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BC850CLT1G データシート(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 6 1 Publication Order Number: BC846ALT1/D BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO 65 45 30 Vdc Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO 80 50 30 Vdc Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 VEBO 6.0 6.0 5.0 Vdc Collector Current − Continuous IC 100 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM xxD 1 2 3 Preferred devices are recommended choices for future use and best overall value. COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com xx = Specific Device Code D = Date Code See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION |
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