SI7921DN-T1-E3 datasheet(3/5 Pages) VISHAY

部品番号	SI7921DN-T1-E3

部品情報	Dual P-Channel 30-V (D-S) MOSFET

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3 / 5 page

Document Number: 72341

S-51210–Rev. B, 27-Jun-05

www.vishay.com

3

Vishay Siliconix

Si7921DN

New Product

TYPICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.05

0.10

0.15

0.20

0.25

0.30

04

8

12

16

20

ID – Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0

246

8

10

12

VDS = 15 V

ID = 5.1 A

Qg – Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ = 150˚C

20

1

VSD – Source-to-Drain Voltage (V)

10

TJ = 25˚C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

200

400

600

800

0

5

10

15

20

25

30

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

–50

–25

0

25

50

75

100

125

150

VGS = 10 V

ID = 5.1 A

TJ – Junction Temperature (˚C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0

2468

10

VGS – Gate-to-Source Voltage (V)

ID = 5.1 A

同様の部品番号 - SI7921DN-T1-E3

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同様の説明 - SI7921DN-T1-E3

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