STG8207 datasheet(3/7 Pages) SAMHOP

部品番号	STG8207

部品情報	Dual N-Channel E nhancement Mode F ield E ffect Transistor

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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S T G 8207

Parameter

S ymbol

Condition

Min Typ Max Unit

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS = 0V, Is =2A

0.78 1.2

V

b

C

Notes

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

F igure 1. Output C haracteristics

F igure 2. Transfer C haracteristics

F igure 4. On-R esistance Variation with

Temperature

F igure 3. C apacitance

V DS , Drain-to S ource Voltage (V )

V GS , G ate-to-S ource Voltage (V )

V DS , Drain-to-S ource Voltage (V )

a.Surface Mounted on FR 4 Board, t 10sec.

5

0

2

4

6

8

10

12

C iss

C oss

3000

2400

1800

1200

600

0

20

16

12

8

4

0

2

4

6

8

10

12

V GS =10,9,8,7,6,5,4,3V

V GS =2V

3

2.2

1.8

1.4

1.0

0.6

0.2

0

-50

0

50

100

125

T j( C )

-25

25

75

V GS =4.5V

ID=5A

C rss

25 C

25

20

15

10

5

0

0.0

0.6

1.2

1.8

2.4

3.0

3.6

T j=125 C

-55 C

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