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2SK3561 データシート(PDF) 4 Page - Toshiba Semiconductor

部品番号 2SK3561
部品情報  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3561 データシート(HTML) 4 Page - Toshiba Semiconductor

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2SK3561
2005-01-26
4
RDS (ON) – Tc
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
1
0.1
10
100
1000
10000
1
10
100
Ciss
Coss
Crss
160
−40
0
40
80
120
−80
2.0
1.6
1.2
0.8
0.4
0
ID = 8 A
2
4
CASE TEMPERATURE Tc (°C)
COMMON SOURCE
VGS = 10 V
PULSE TEST
CASE TEMPERATURE Tc (°C)
PD – Tc
60
0
0
40
80
120
160
20
40
IDR – VDS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE
Tc
= 25°C
PULSE TEST
0
0.1
−0.2
1
10
100
−0.4
−0.6
−0.8
VGS = 0, −1 V
10
3
1
5
−1.0
−1.2
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = 8 A
Tc
= 25°C
PULSE TEST
0
10
20
VDD = 100 V
VDS
VGS
400
200
30
50
40
500
400
300
200
100
0
20
16
12
8
4
0
Vth – Tc
CASE TEMPERATURE Tc (°C)
0
1
2
3
5
−80
−40
0
40
80
120
160
4
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST


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