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2SK3561 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SK3561
部品情報  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3561 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SK3561
2005-01-26
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 500 V, VGS = 0 V
100
µA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
0.75
0.85
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 4 A
3.0
6.5
S
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
26
Turn-on time
ton
45
Fall time
tf
38
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
28
Gate-source charge
Qgs
16
Gate-drain charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 8 A
12
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
8
A
Pulse drain reverse current
(Note 1)
IDRP
32
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1200
ns
Reverse recovery charge
Qrr
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/µs
10
µC
Marking
RL =
50
0 V
10 V
VGS
VDD ∼− 200 V
ID = 4 A
VOUT
50
Duty <= 1%, tw = 10 µs
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3561
Part No. (or abbreviation code)


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