データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

IRF540NPBF データシート(PDF) 2 Page - International Rectifier

部品番号 IRF540NPBF
部品情報  HEXFET Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF540NPBF データシート(HTML) 2 Page - International Rectifier

  IRF540NPBF Datasheet HTML 1Page - International Rectifier IRF540NPBF Datasheet HTML 2Page - International Rectifier IRF540NPBF Datasheet HTML 3Page - International Rectifier IRF540NPBF Datasheet HTML 4Page - International Rectifier IRF540NPBF Datasheet HTML 5Page - International Rectifier IRF540NPBF Datasheet HTML 6Page - International Rectifier IRF540NPBF Datasheet HTML 7Page - International Rectifier IRF540NPBF Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRF540NPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 16A, VGS = 0V
trr
Reverse Recovery Time
–––
115 170
ns
TJ = 25°C, IF = 16A
Qrr
Reverse Recovery Charge
–––
505 760
nC
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
33
110
A
Starting TJ = 25°C, L =1.5mH
RG = 25Ω, IAS = 16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width
≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
44
m
VGS = 10V, ID = 16A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21
––– –––
S
VDS = 50V, ID = 16A
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
71
ID = 16A
Qgs
Gate-to-Source Charge
–––
–––
14
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
21
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 50V
tr
Rise Time
–––
35
–––
ID = 16A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 5.1Ω
tf
Fall Time
–––
35
–––
VGS = 10V, See Fig. 10
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1960 –––
VGS = 0V
Coss
Output Capacitance
–––
250 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
––– 700 185
mJ
IAS = 16A, L = 1.5mH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


同様の部品番号 - IRF540NPBF

メーカー部品番号データシート部品情報
logo
International Rectifier
IRF540NPBF IRF-IRF540NPBF Datasheet
159Kb / 9P
   Advanced Process Technology
logo
VBsemi Electronics Co.,...
IRF540NPBF VBSEMI-IRF540NPBF Datasheet
984Kb / 7P
   N-Channel 100-V (D-S) MOSFET
logo
International Rectifier
IRF540NPBF IRF-IRF540NPBF_15 Datasheet
159Kb / 9P
   Advanced Process Technology
More results

同様の説明 - IRF540NPBF

メーカー部品番号データシート部品情報
logo
International Rectifier
IRF7316 IRF-IRF7316 Datasheet
237Kb / 7P
   HEXFET POWER MOSFET
IRF6215 IRF-IRF6215 Datasheet
125Kb / 8P
   HEXFET Power MOSFET
IRF530NS IRF-IRF530NS Datasheet
618Kb / 10P
   HEXFET Power MOSFET
IRLMS2002 IRF-IRLMS2002 Datasheet
95Kb / 8P
   HEXFET Power MOSFET
IRFH5301PBF IRF-IRFH5301PBF Datasheet
309Kb / 8P
   HEXFET Power MOSFET
IRLR8726PBF IRF-IRLR8726PBF_09 Datasheet
360Kb / 11P
   HEXFET Power MOSFET
IRLML2502GPBF IRF-IRLML2502GPBF Datasheet
180Kb / 8P
   HEXFET Power MOSFET
IRF7304QPBF IRF-IRF7304QPBF_10 Datasheet
248Kb / 9P
   HEXFET POWER MOSFET
IRFS3107-7PPBF IRF-IRFS3107-7PPBF Datasheet
320Kb / 9P
   HEXFET Power MOSFET
IRFH5106PBF IRF-IRFH5106PBF Datasheet
339Kb / 8P
   HEXFET Power MOSFET
IRFH5406PBF IRF-IRFH5406PBF Datasheet
305Kb / 8P
   HEXFET Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com