BAP55L datasheet(3/8 Pages) PHILIPS

部品番号	BAP55L

部品情報	Silicon PIN diode

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メーカー	PHILIPS [NXP Semiconductors]

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3 / 8 page

9397 750 14811

Preliminary data sheet

Rev. 01 — 5 April 2005

3 of 8

Philips Semiconductors

BAP55L

Silicon PIN diode

|s

12|

2

isolation

VR =0V; Figure 4

f = 900 MHz

-

17.6

-

dB

f = 1800 MHz

-

13

-

dB

f = 2450 MHz

-

11.1

-

dB

|s21|2

insertion loss

IF = 0.5 mA; Figure 3

f = 900 MHz

-

0.25

-

dB

f = 1800 MHz

-

0.27

-

dB

f = 2450 MHz

-

0.29

-

dB

IF = 1 mA; Figure 3

f = 900 MHz

-

0.17

-

dB

f = 1800 MHz

-

0.19

-

dB

f = 2450 MHz

-

0.21

-

dB

IF =10mA; Figure 3

f = 900 MHz

-

0.07

-

dB

f = 1800 MHz

-

0.09

-

dB

f = 2450 MHz

-

0.12

-

dB

IF = 100 mA; Figure 3

f = 900 MHz

-

0.05

-

dB

f = 1800 MHz

-

0.07

-

dB

f = 2450 MHz

-

0.09

-

dB

τL

charge carrier life

time

when switched from

IF = 10 mA to IR = 6 mA;

RL = 100 Ω; measured at

IR =3mA

-

0.28

-

µs

LS

series inductance

-

0.6

-

nH

Table 6:

Characteristics …continued

Tj = 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

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