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FDP6670AS データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDP6670AS データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDP6670AS/FDB6670AS Rev A (X) Typical Characteristics 0 30 60 90 120 150 01 234 VDS, DRAIN-SOURCE VOLTAGE (V) 5.0V VGS = 10V 4.5V 6.0V 4.0V 3.5V 3.0V 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 ID, DRAIN CURRENT (A) VGS = 3.5V 4.0V 6.0V 5.0V 10V 4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 255075 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 31A VGS = 10V 0.002 0.007 0.012 0.017 0.022 246 8 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 15.5A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 20 40 60 80 1.522.533.5 4 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC -55 oC VDS = 5V 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDP6670AS |
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同様の説明 - FDP6670AS |
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