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FDZ7064AS データシート(PDF) 5 Page - Fairchild Semiconductor |
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FDZ7064AS データシート(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page 5 www.fairchildsemi.com FDZ7064AS Rev. A Typical Characteristics SyncFET Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064AS. Figure 12. FDZ7064AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET . Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div TIME : 12.5ns/div 0.00001 0.0001 0.001 0.01 05 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 °C TA = 25 °C TA = 100 °C |
同様の部品番号 - FDZ7064AS |
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同様の説明 - FDZ7064AS |
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