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K3567 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 K3567
部品情報  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

K3567 データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK3567
2003-04-15
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| =
S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
TBD
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
JEITA
TOSHIBA
2.7±0.2
1 2 3
2.54±0.25
2.54±0.25
10±0.3
φ
3.2±0.2
0.69±0.15
1.1
1.1
1.
Gate
2.
Drain
3.
Source
1
3
2
unit:mm
TENTATIVE


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