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K3567 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 K3567
部品情報  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

K3567 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SK3567
2003-04-15
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
Gate-source breakdown voltage
V (BR) GSS
IG =±10 µA, VGS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
µA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.8 A
1.7
2.2
Forward transfer admittance
Yfs
VDS = 20 V, ID = 1.8 A
TBD
TBD
S
Input capacitance
Ciss
TBD
Reverse transfer capacitance
Crss
TBD
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
TBD
pF
Rise time
tr
TBD
Turn-on time
ton
TBD
Fall time
tf
TBD
Switching time
Turn-off time
toff
TBD
ns
Total gate charge
Qg
TBD
Gate-source charge
Qgs
TBD
Gate-drain charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A
TBD
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
3.5
A
Pulse drain reverse current
(Note 1)
IDRP
14
A
Forward voltage (diode)
VDSF
IDR = 3.5 A, VGS = 0 V
−1.9
V
Reverse recovery time
trr
TBD
ns
Reverse recovery charge
Qrr
IDR = 3.5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
TBD
µC
RL =
111
0 V
10 V
VGS
VDD ∼− 200 V
ID = 1.8A VOUT
4.7
Duty <= 1%, tw = 10 µs
TENTATIVE


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