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LMH9126 データシート(PDF) 4 Page - Texas Instruments

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部品番号. LMH9126
部品情報  LMH9126 2.2–2.9-GHz Differential to Single-Ended Amplifier With Integrated Balun
ダウンロード  18 Pages
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
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LMH9126 Datasheet(HTML) 4 Page - Texas Instruments

 
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LMH9126
SNLS634 – APRIL 2020
www.ti.com
Product Folder Links: LMH9126
Submit Documentation Feedback
Copyright © 2020, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
VDD
–0.3
3.6
V
RF pins
INP, INM, OUTP
–0.3
VDD
V
Digital input pin
PD
–0.3
VDD
V
Continuous
wave (CW)
input
T = 25 °C
25
dBm
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, allpins(1)
±1000
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Supply voltage
3.15
3.3
3.45
V
TA
Ambient temperature
–40
105
°C
TJ
Junction temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953
6.4 Thermal Information
THERMAL(1)
LMH9126
UNIT
RRL PKG
12-PIN WQFN
RθJA
Junction-to-ambient thermal resistance
74.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
72.4
°C/W
RθJB
Junction-to-board thermal resistance
37.1
°C/W
ΨJT
Junction-to-top characterization parameter
3.2
°C/W
ΨJB
Junction-to-board characterization parameter
37.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
14.2
°C/W
6.5 Electrical Characteristics
TA = 25°C, VDD = 3.3 V, frequency (fin) = 2.6 GHz, differential input impedance (ZIN) = 100 Ω, output load (ZLOAD) = 50 Ω,
POUT (TOTAL) = 8 dBm (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RF PERFORMANCE
fRF
RF frequency range
2200
2900
MHz
BW1dB
1-dB bandwidth
600
MHz


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