FQPF5N50CF datasheet(3/8 Pages) FAIRCHILD

部品番号	FQPF5N50CF

部品情報	500V N-Channel MOSFET

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FQPF5N50CF Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2468

10

-1

10

0

10

1

150

°C

25

°C

-55

°C

Notes :

1. V

DS

= 40V

2. 250

µs Pulse Test

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom :

5.0 V

Notes :

1. 250

µs Pulse Test

2. T

C

= 25

°C

V

DS

, Drain-Source Voltage [V]

05

10

15

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V

GS

= 20V

V

GS

= 10V

Note : T

J

= 25

°C

I

D

, Drain Current [A]

0.20.4

0.60.8

1.0

1.2

1.4

10

-1

10

0

10

1

150?

Notes :

1. V

GS

= 0V

2. 250

µs Pulse Test

25?

V

SD

, Source-Drain voltage [V]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

Notes ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0

5

10

15

20

0

2

4

6

8

10

12

V

DS

= 250V

V

DS

= 100V

V

DS

= 400V

Note : I

D

= 5A

Q

G

, Total Gate Charge [nC]

同様の部品番号 - FQPF5N50CF

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FQPF5N50CFTU	662Kb / 8P	Low gate charge ( typical 18nC)

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