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データシートサーチシステム |
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データシートサーチシステム |
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BTF3035EJ データシート(PDF) 11 Page - Infineon Technologies AG |
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BTF3035EJ データシート(HTML) 11 Page - Infineon Technologies AG |
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11 / 59 page  Datasheet 11 Rev. 1.0 2018-08-08 BTF3035EJ Smart Low-Side Power Switch General Product Characteristics 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Table 4 TJ = -40°C to +150°CVDD = 3.0 V to 5.5 VVBAT = 6 V to 18 Vall voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to Case RthJC –2 - K/W 1) 2) 1) Not subject to production test, specified by design 2) Specified RthJC value is simulated at natural convection on a cold plate setup (bottom of package is fixed to ambient temperature). TC = 85°C. Device is loaded with 1W power. P_4.3.4 Junction to Ambient (2s2p) RthJA(2s2p) –34 – K/W 1) 3) 3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer. Ta = 85°C, Device is loaded with 1W power. P_4.3.10 Junction to Ambient (1s0p+600mm2 Cu) RthJA(1s0p) –45 – K/W 1) 4) 4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600mm2 and 70 mm thickness. Ta = 85°C, Device is loaded with 1W power. P_4.3.15 |
同様の部品番号 - BTF3035EJ |
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同様の説明 - BTF3035EJ |
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