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MPSA13 データシート(PDF) 1 Page - First Silicon Co., Ltd

部品番号. MPSA13
部品情報  TRANSISTOR (NPN)
ダウンロード  2 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
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MPSA13 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

   
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SEMICONDUCTOR
TECHNICAL DATA
MPSA13
2013. 04. 20
1/2
Revision No : 0
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
L
4.70 MAX
4.80 MAX
3.70 MAX
1.00
1.27
0.85
0.45
14.00 0.50
2.30
D
1
2
3
B
G
H
F
F
E
C
E
0.51 MAX
M
+
_
0.55 MAX
1. EMITTER
2. BASE
3. COLLECTOR
MPSA13
TRANSISTOR (NPN)
FEATURES
Darlington Transistors
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
s
t
i
n
U
e
u
l
a
V
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
VCBO
V
0
3
e
g
a
t
l
o
V
e
s
a
B
-
r
o
t
c
e
ll
o
C
VCEO
V
0
3
e
g
a
t
l
o
V
r
e
t
t
i
m
E
-
r
o
t
c
e
ll
o
C
VEBO
V
0
1
e
g
a
t
l
o
V
e
s
a
B
-
r
e
t
t
i
m
E
IC
A
5
.
0
t
n
e
r
r
u
C
r
o
t
c
e
ll
o
C
PC
W
m
5
2
6
n
o
i
t
a
p
i
s
s
i
D
r
e
w
o
P
r
o
t
c
e
ll
o
C
RθJA
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
Tstg
0
5
1
+
~
5
5
-
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB
0
3
0
=
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
10
V
Collector cut-off current
ICBO
VCB=30V,IE 0
=
0.1
μA
Emitter cut-off current
IEBO
VEB=10V,IC 0
=
0.1
μA
hFE(1)
*
VCE=5V, IC=10mA
5000
DC current gain
hFE(2)
*
VCE=5V, IC=100mA
10000
Collector-emitter saturation voltage
VCE(sat)
*
IC=100mA,IB=0.1mA
1.5
V
Base-emitter voltage
VBE
*
VCE=5V,IC=100mA
2.0
V
Current gain-bandwidth product
fT
VCE=5V,IC=10mA,f=100MHz
125
MHz
*Pulse test: pulse width
≤300μs, duty cycle≤ 2.0%.


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