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MJ15001 データシート(PDF) 1 Page - ON Semiconductor |
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MJ15001 データシート(HTML) 1 Page - ON Semiconductor |
1 / 4 page 1 Motorola Bipolar Power Transistor Device Data Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 200 W @ 40 V 50 W @ 100 V • For Low Distortion Complementary Designs • High DC Current Gain — hFE = 25 (Min) @ IC = 4 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 140 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current — Continuous IC 15 Adc Base Current — Continuous IB 5 Adc Emitter Current — Continuous IE 20 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 200 1.14 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.875 _C/W Maximum Lead Temperature for Soldering Purposes: 1/16 ″ from Case for v 10 seconds TL 265 _C MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15001/D © Motorola, Inc. 1995 MJ15001 MJ15002 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS NPN PNP CASE 1–07 TO–204AA (TO–3) |
同様の部品番号 - MJ15001 |
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同様の説明 - MJ15001 |
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