データシートサーチシステム |
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TSD882SCY データシート(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD882SCY データシート(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSD882S 1-3 2003/12 rev. A TSD882S Low Vce(sat) NPN Transistor BVCEO = 50V Ic = 3A VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA Features Low VCE (SAT). Excellent DC current gain characteristics Structure Epitaxial planar type. Complimentary to TSB772S Ordering Information Part No. Packing Package TSD882SCT Bulk Pack TO-92 TSD882SCY Tape & Reel SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50V V Collector-Emitter Voltage VCEO 50V V Emitter-Base Voltage VEBO 5 V DC 3 Collector Current Pulse IC 7 (note 1) A Collector Power Dissipation TO-92 SOT-89 PD 0.75 0.50 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 350uS, Duty <= 2% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 50uA, IE = 0 BVCBO 50 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 40V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- uA Collector-Emitter Saturation Voltage IC / IB = 2.0A / 0.2A VCE(SAT) -- 0.3 0.5 V DC Current Transfer Ratio VCE = 2V, IC = 1A hFE 160 -- 500 Transition Frequency VCE = 5V, IC = 100mA, f = 100MHz fT -- 90 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob 45 -- pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Pin assignment: TO-92 1. Emitter 2. Collector 3. Base SOT-89 1. Base 2. Collector 3. Emitter |
同様の部品番号 - TSD882SCY |
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同様の説明 - TSD882SCY |
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