SI3481DV datasheet(1/5 Pages) VISHAY

部品番号	SI3481DV

部品情報	P-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

D Load Switch

Si3481DV

Vishay Siliconix

Document Number: 72105

S-40238—Rev. B, 16-Feb-04

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

−30

0.048 @ VGS = −10 V

−5.3

−30

0.079 @ VGS = −4.5 V

−4.1

(1, 2, 5, 6) D

(4) S

(3) G

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3481DV-T1—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

−30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−5.3

−4.0

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−4.2

−3.2

A

Pulsed Drain Current

IDM

−20

A

Continuous Source Current (Diode Conduction)a

IS

−1.7

−0.95

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.14

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

0.73

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

55

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

36

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

同様の部品番号 - SI3481DV

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI3481DV	100Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. C, 20-Mar-06
VBsemi Electronics Co.,...	SI3481DV-T1-GE3	451Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI3481DV	100Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. C, 20-Mar-06

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同様の説明 - SI3481DV

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