MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

MJE700,T, MJE800,T

(IC = 50 mAdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

V(BR)CEO

60

80

—

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

MJE700,T, MJE800,T

(VCE = 80 Vdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

ICEO

—

—

100

100

µAdc

Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)

ICBO

—

—

100

500

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

hFE

750

750

100

—

—

—

—

Collector–Emitter Saturation Voltage (1)

(IC = 1.5 Adc, IB = 30 mAdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, IB = 40 mAdc)

MJE703, MJE803

(IC = 4.0 Adc, IB = 40 mAdc)

All devices

VCE(sat)

—

—

—

2.5

2.8

3.0

Vdc

Base–Emitter On Voltage (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

VBE(on)

—

—

—

2.5

2.5

3.0

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

hfe

1.0

—

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

0.04

0.2

2.0

0.1

0.06

0.4

1.0

4.0

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.8

0.6

0.4

0.2

ts

Figure 2. Switching Times Test Circuit

tr

td @ VBE(off) = 0

PNP

NPN

4.0

0.6

Figure 3. Switching Times

t, TIME (ms)

1.0

0.01

0.01

0.5

0.2

0.1

0.05

0.02

0.05

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

Z

θJC(t) = r(t) RθJC

R

θJC = 2.50°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

0.02

Figure 4. Thermal Response (MJE700T, 800T Series)

V2

APPROX

+ 8.0 V

0

≈ 6.0 k

SCOPE

VCC

– 30 V

RC

51

For td and tr, D1 id disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

25

µs

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

V1

APPROX

–12 V

TUT

RB

D1

≈ 150

tf

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C