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TEA2095TE データシート(PDF) 5 Page - NXP Semiconductors

部品番号. TEA2095TE
部品情報  GreenChip dual synchronous rectifier controller
ダウンロード  19 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
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TEA2095TE Datasheet(HTML) 5 Page - NXP Semiconductors

 
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NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
TEA2095TE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
5 / 19
8 Functional description
8.1 Introduction
The TEA2095TE is a controller IC for synchronous rectification. It is perfectly suited
to be used in resonant applications. It can drive two synchronous rectifier MOSFETs
on the secondary side of the central tap transformer winding. Figure 3 shows a typical
configuration.
aaa-016991
DSA
GDA
SSA
DSB
VCC
GDB
SSB
GND
Qprim1
CHB
Qprim2
Qsec1
PRIMARY
SIDE
CONTROLLER
IC
Vin
Vout
TR
IC1
Qsec2
Cout
Figure 3. TEA2095TE typical configuration
8.2 Start-up and undervoltage lockout (VCC pin)
When the voltage on the VCC pin exceeds Vstart, the IC leaves the UVLO state and
activates the SR circuitry. When the voltage drops to below Vstop, the IC reenters the
UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper
operation, the VCC pin must be decoupled with an extra capacitor (not only with Cout)
between the VCC pin and the GND pin. To reduce inductance effects because of high
gate driver currents, the extra capacitor must be connected as close as possible to the
IC.
8.3 Drain sense (DSA and DSB pins)
The drain sense pins are input pins capable of handling input voltages up to 120 V.
At positive drain sense voltages, the gate driver is in off-mode with pulled-down gate
driver pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR
through sensing the drain source differential voltage.


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