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TEA2095TE データシート(PDF) 10 Page - NXP Semiconductors

部品番号. TEA2095TE
部品情報  GreenChip dual synchronous rectifier controller
ダウンロード  19 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
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TEA2095TE Datasheet(HTML) 10 Page - NXP Semiconductors

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NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
TEA2095TE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
10 / 19
9 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Voltages
VCC
supply voltage
−0.4 +38
V
Vsense(D)A
drain sense voltage A
DC
−0.8 +120 V
Vsense(D)B
drain sense voltage B
DC
−0.8 +120 V
Vsense(S)A
source sense voltage A
DC
−0.4 +0.4
V
Vsense(S)B
source sense voltage B
DC
−0.4 +0.4
V
VGDA
voltage on pin GDA
DC
[1] −0.4 +12.0 V
VGDB
voltage on pin GDB
DC
[1] −0.4 +12.0 V
General
fmax
maximum frequency
if not limited by Ptot
-
1
MHz
Tstg
storage temperature
−55
+150 °C
Tj
junction temperature
−40
+150 °C
Electrostatic discharge (ESD)
human body model (HBM)
[2] -
2000 V
VESD
electrostatic discharge
voltage
charged device model
(CDM)
[3] -
500
V
[1]
Output pin; not to be voltage driven
[2]
Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
[3]
Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor.
10 Recommended operating conditions
Table 5. Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
4.75
38
V
Tj
junction temperature
−40
+125
°C
11 Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from
junction to ambient
HSO8 package; PCB 4 layer;
4 vias; 0.4 mm; top/btm;
35 μm Cu; 60 mm x 125 mm;
exposed die pad soldered to
PCB
46
K/W
Rth(j-c)
thermal resistance from
junction to case
HSO8 package
8
K/W


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