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TEA2095T データシート(PDF) 13 Page - NXP Semiconductors

部品番号. TEA2095T
部品情報  GreenChip dual synchronous rectifier controller
ダウンロード  19 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
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TEA2095T Datasheet(HTML) 13 Page - NXP Semiconductors

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NXP Semiconductors
TEA2095T
GreenChip dual synchronous rectifier controller
TEA2095T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
13 / 19
13 Application information
A resonant switched mode power supply with the TEA2095T consists of a primary side
half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain low
conduction loss rectification, SR MOSFETs are used in the output stage. The TEA2095T
controls these SR MOSFETs.
The gate drive voltage for the SR switch is derived from the voltage difference between
the corresponding drain sense and source sense pins.
Special attention must be paid to the connection of the drain sense and source sense
pins. The voltages measured on these pins are used for gate drive voltage. Wrong
measurement results in a less efficient gate drive because the gate voltage is either
too low or too high. The connections to these pins must not interfere with the power
wiring. The power wiring conducts currents with high dI/dt values. It can easily cause
measurement errors resulting from induced voltages due to parasitic inductances.
The separate source-sense pins enable the direct sensing of the source voltage of the
external MOSFETs. Using the current carrying power ground tracks is not allowed.
13.1 Application diagram resonant application
aaa-016991
DSA
GDA
SSA
DSB
VCC
GDB
SSB
GND
Qprim1
CHB
Qprim2
Qsec1
PRIMARY
SIDE
CONTROLLER
IC
Vin
Vout
TR
IC1
Qsec2
Cout
Figure 6. Typical resonant application with TEA2095T


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