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HM5563A データシート(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

部品番号. HM5563A
部品情報  One Cell Lithium-ion/Polymer Battery Protection IC
ダウンロード  11 Pages
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メーカー  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
ホームページ  http://www.hmsemi.com/
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HM5563A Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

 
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______________________________________ ____________________________________________________ _________________________
_
Lead Temperature ( Soldering, 10 sec)
300
°C
Power Dissipation at T=25°C
0.4
W
Package Thermal Resistance (Junction to Ambient) θJA
250
°C /W
Package Thermal Resistance (Junction to Case) θJC
130
°C /W
HBM ESD
2000
V
ELECTRICAL CHARACTERISTICS
Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Detection Voltage
Overcharge Detection Voltage
VCU
4.25
4.30
4.35
V
Overcharge Release Voltage
VCL
4.05
4.10
4.15
V
Overdischarge Detection Voltage
VDL
2.3
2.4
2.5
V
Overdischarge Release Voltage
VDR
2.9
3.0
3.1
V
Detection Current
Overdischarge Current1 Detection
*IIOV1 VDD=3.6V
3
A
Load Short-Circuiting
Detection
*ISHORT VDD=3.6V
20
A
Current Consumption
Current Consumption in Normal
Operation
IOPE
VDD=3.6V
VM =0V
2.8
6
μ A
Current Consumption in power
Down
IPDN
VDD=2.0V
VM pin floating
1.5
3
μ A
VM Internal Resistance
Internal Resistance between
VM and VDD
*RVMD VDD=2.0V
VM pin floating
320
k
Internal Resistance between VM
and GND
*RVMS
VDD=3.6V
VM=1.0V
100
k
FET on Resistance
30
Equivalent FET on Resistance
*RSS(ON) VDD=3.6V IVM =1.0A
35
m
Over Temperature Protection
120
Over Temperature Protection
*TSHD+
120
oC
Over Temperature Recovery Degree *TSHD-
100
Detection Delay Time
0.25
HM5563A


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