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WSD2209DN データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD2209DN
部品情報  Dual P-Ch MOSFET
ダウンロード  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD2209DN Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
10s
Steady State
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Sou
rce Voltage
±
10
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V
1
-
7.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V
1
-
4.5
A
ID@TA=25℃
Continuous Drain Current, VGS @ -10V
1
-
36
-
30
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V
1
-
28
-
23
A
IDM
Pulsed Drain Current
2
-
25
A
EAS
Single Pulse Avalanche Energy
3
---
mJ
IAS
Avalanche Current
-
--
A
PD@TC=25℃
Total Power Dissipation
4
2.5
W
PD@TA=25℃
Total Power Dissipation
4
1.6
1.7
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
BVDSS
RDSON
ID
-
20V
33mΩ
-
7.5A
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
DFN3X3-8 Pin Configuration
Product Summery
The WSD2209DN is the highest performance
trench P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSD2209 meet the RoHS and Green
Product requirement with full function reliability
approved.
WSD2209DN
Page 1
www.winsok.tw
Dec.2014
Dual P-Ch MOSFET
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available


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