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WSD2209DN データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD2209DN
部品情報  Dual P-Ch MOSFET
ダウンロード  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD2209DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
20
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.
132
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-
4.5V , ID=-4A
---
28
33
m
Ω
VGS=-
2.5V , ID=-3A
---
37
45
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-
0.3
-
0.6
-
1
V
VGS(th)
VGS(th) Temperature Coefficient
---
4.
4
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
20V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
20V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS
8V , VDS=0V
---
10
---
μ A
gfs
Forward Transconductance
VDS=-5V , ID=-
20A
---
9
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-1
0V , VGS=-4.5V , ID=-8A
---
13.8
17.94
nC
Qgs
Gate-Source Charge
---
4.1
5.33
Qgd
Gate-Drain Charge
---
5.6
7.28
Td(on)
Turn-On Delay Time
VDD=-1
0V , VGS=-4.5V ,
RG=
3Ω ID=-1A ,RL=0.5Ω
---
6.2
---
ns
Tr
Rise Time
---
12.7
---
Td(off)
Turn-Off Delay Time
---
51.7
---
Tf
Fall Time
---
16
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
1160
---
pF
Coss
Output Capacitance
---
104
---
Crss
Reverse Transfer Capacitance
---
29
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
,t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSD2209DN
Page 2
www.winsok.tw
Dec.2014
VGS=-
1.8V , ID=-2A
---
50
68
Dual P-Ch MOSFET


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